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Article

Dynamics of the defects recharging in coarse-grained p-CdTe films

Kh. Kh. IsmailovPhysicotechnical Institute, Tashkent, 700084, UzbekistanZh. ZhanabergenovPhysicotechnical Institute, Tashkent, 700084, UzbekistanШ. А. МирсагатовPhysicotechnical Institute, Tashkent, 700084, UzbekistanSmagul KarazhanovPhysicotechnical Institute, Tashkent, 700084, Uzbekistan
Semiconductorsjournal2006en
ABI

Abstract

The capacitance-voltage characteristic of the MOS-structure based on the coarse-grained p-CdTe film is studied. The nonmonotonici character of the characteristic is attributed to the recharging of deep acceptor levels at the semiconductor-oxide interface and by the variation in the degree of compensation of surface states.

Topics

Advanced Semiconductor Detectors and MaterialsChalcogenide Semiconductor Thin FilmsSemiconductor materials and interfaces

Identifiers

DOI
10.1134/s1063782606020138

Citations and references

Cited by 06 references
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