Impact of electron-escaping effect on the γ-ray sensitivity of PIN detector
Abstract
The impact of electron-escaping effect on the γ-ray sensitivity of PIN detector and corresponding compensation effect of aluminum and polyethylene are simulated and experimentally studied.The simulation is conducted by using MCNP code to calculate the pulse-height energy deposition of γ-rays in the sensitive layer of PIN detector,the result of which is then analyzed to give a proposed sensitivity.Experimental study is conducted by using ~(60)Co gamma-ray source to calibrate the sensitivity under various compensating conditions.The simulation and calibration results indicate that electron-escaping effect has significant impact on the sensitivity and can be partially compensated by setting aluminum or polyethylene sheet in front of the detector.