New Injection-Voltaic Effect Elementary Basis
Kh. K. AripovTashkent University of Information Technologies, Tashkent, UzbekistanKh. Kh. BustanovTashkent University of Information Technologies, Tashkent, UzbekistanF.R. NasirkhodjaevTashkent University of Information Technologies, Tashkent, UzbekistanE. V. Ob’edkovTashkent University of Information Technologies, Tashkent, Uzbekistan
2006en
ABI
Abstract
A circuit of an ideal stable current generator (SCG) was offered. It was shown that at a fixed value of the SCG current and chosen technology of integrated circuits production, it is possible to design such technology of structural elements of SCG as to value of internal resistance of the circuit tending to infinity. A complimentary bipolar transistors inverter (CBTI) was offered which can work at low supply voltages (near to contact potential difference on p-n junction of bipolar transistors (BT) and has low consumption current.
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