Article

Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy

P. B. ParchinskiyUlugbek National University of Uzbekistan, Tashkent, 700174, UzbekistanA. Yu. BobylevUlugbek National University of Uzbekistan, Tashkent, 700174, UzbekistanС. И. ВласовUlugbek National University of Uzbekistan, Tashkent, 700174, UzbekistanFu Chen YuChungnam National University, Daejeon, 305-764, Republic of KoreaDojin KimChungnam National University, Daejeon, 305-764, Republic of Korea

Semiconductorsjournal2007en

ABI

Abstract

The luminescence spectra of the GaMnAs layers produced by low-temperature molecular beam epitaxy are studied at temperatures ranging from 4 to 150 K. In the spectra of the GaMnAs layers containing the MnAs clusters, local peaks at the energies of 1.36 and 1.33 eV are observed. It is shown that the red shift of the excitonic luminescence line depends on the Mn content in the semiconductor matrix.

Topics

ZnO doping and properties Electronic and Structural Properties of Oxides Advanced Semiconductor Detectors and Materials

Identifiers

DOI: 10.1134/s106378260710003x

Citations and references

Cited by 2 16 references

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