Article

<title>About mechanisms of anomalous photovoltage effect in CdTe films</title>

G. A. NabievFerghana Polytechnical Institute (Uzbekistan)

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIEjournal2007en

ABI

Abstract

In the work a method of discrimination of exposure skewness contribution and differences of p-n and n-p junctions of p-n-p structure to the anomalous photovoltage effect (APV-effect) in the films of cadmium telluride is suggested.

Topics

Advanced Semiconductor Detectors and Materials Engineering Diagnostics and Reliability Thermography and Photoacoustic Techniques

Identifiers

DOI: 10.1117/12.742553

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&lt;title&gt;About mechanisms of anomalous photovoltage effect in CdTe films&lt;/title&gt;

Abstract

Topics

Identifiers

Citations and references

<title>About mechanisms of anomalous photovoltage effect in CdTe films</title>