Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals
N. N. ZaveryukhinaPhysical Engineering Institute, Solar Physics Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanE. B. ZaveryukhinaNational University of Uzbekistan, Tashkent, UzbekistanС. И. ВласовPhysical Engineering Institute, Solar Physics Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanB. N. ZaveryukhinPhysical Engineering Institute, Solar Physics Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Abstract
The effect of ultrasonic treatment at various powers on the density N SS of surface states and their energy spectrum in p-type silicon single crystals has been studied. It is established that, depending on the regime of ultrasonic treatment, N SS can either increase or decrease compared to that in the initial single crystals. This is accompanied by a redistribution of the total charge of the surface states over the silicon bandgap width. This phenomenon is related to the fact that an acoustic wave, being an energy carrier, modifies a defect subsystem of the crystal by redistributing the impurity atoms and by generating new defects.
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