Impurity voltaic effects and thermophotovoltaics
М. С. СаидовPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Abstract
The possibility of extending the temperature range in which thermophotovoltaic systems can be simplified and their efficiency can be raised as a result of use of the impurity thermovoltaic and thermophotovoltaic effects is discussed. The existence of the continuous solid solutions of Fe, Co, and Ni semiconductor compounds is predicted, which points to the possibility of increasing the solubility of deep impurities in the latter.
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