← Back to work
Works cited by this work
15 works
Work: Anisotropy of magnetoresistance in Be Co-doped GaMnAs
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
T. Dietl, Hideo Ohno, F. Matsukura +2
Article200016 citationsABISpin disorder scattering mechanism of ferromagnetic Ga1−xMnxAs layers on (100) GaAs substrates
Im Taek Yoon, Tae Won Kang, K. H. Kim +1
Article20047 citationsABIHole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
T. Dietl, Hideo Ohno, F. Matsukura
Article20016 citationsABIMetal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors
Y. Iye, A. Oiwa, Akira Endo +5
Article19994 citationsABIHall effect and hole densities in Ga1−xMnxAs
K. W. Edmonds, K. Y. Wang, R. P. Campion +4
Article20023 citationsABIEffect of Be doping on the properties of GaMnAs ferromagnetic semiconductors
Sang‐Hoon Lee, S. J. Chung, I. S. Choi +8
Article20033 citationsABISpatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE
Koji Onomitsu, Hideo Fukui, Takashi Maeda +2
Article20052 citationsABISpintronics and spintronics materials
В.А. Иванов, Т. Г. Аминов, Vladimir M. Novotortsev +1
Article20042 citationsABIAnisotropic magnetoresistance and magnetic anisotropy in high-quality (Ga,Mn)As films
Kai Wang, K. W. Edmonds, R. P. Campion +3
Article20052 citationsABI