The rate of surface generation of charge carriers at the semiconductor-glass interface
С. И. ВласовUlugbek National University of Uzbekistan, Studencheskii gorodok, Tashkent, 700174, Republic of UzbekistanA. V. OvsyannikovUlugbek National University of Uzbekistan, Studencheskii gorodok, Tashkent, 700174, Republic of Uzbekistan
ABI
Abstract
A method was proposed that allows to one to determine the temporal dependence of the rate of the surface generation at the semiconductor-insulator interface. It was shown that the rate of surface generation in metal-insulator-semiconductor (MIS) structures made of n-Si covered by a lead-borosilicate glass was a function of time.
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