Photovoltaic properties of microrelief GaAs structures
Р. А. МуминовPhysico-Technical Institute NPO Fizika-Solntse Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanМ. Н. ТурсуновPhysico-Technical Institute NPO Fizika-Solntse Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanU. B. AbdievPhysico-Technical Institute NPO Fizika-Solntse Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanZ. S. SettarovaPhysico-Technical Institute NPO Fizika-Solntse Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Abstract
The formation of microrelief on the front surface of AlGaAs/GaAs cells is proposed. The technology of formation of diffusion p-n junctions has been developed and AlGaAs/GaAs-based photosensitive structures have been prepared. Their spectral characteristics are studied.
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