Spatially resolved investigations of the emission around 3.31 eV (A-line) from ZnO nanocrystals
S. S. KurbanovDongguk University 1 Quantum-functional Semiconductor Research Center, , Seoul 100-715, Republic of KoreaГ. Н. ПанинDongguk University 1 Quantum-functional Semiconductor Research Center, , Seoul 100-715, Republic of KoreaTae Won KangDongguk University 1 Quantum-functional Semiconductor Research Center, , Seoul 100-715, Republic of Korea
ABI
Abstract
ZnO nanocrystals grown by chemical solution deposition were studied by means of photoluminescence and cathodoluminescence spectroscopy. A postgrown annealing treatment significantly improved the UV emission efficiency and resulted in the clear appearance of a low temperature emission band around 3.31 eV (so-called A-line). Spatially and wavelength resolved cathodoluminescence measurements revealed a spotlike distribution of the A-line emission on a nanocrystal surface. It is found that there is a strong correlation between the emission around 3.31 eV and the specklike defects on the nanocrystal surface that appeared after annealing. The origin of the A-line and the specklike defects are discussed.
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