Article

Measurement of efficient thickness of transition layer, stimulated by microwave radiation, in contacts Mo-GaAs

A. B. KamalovCombined Institute of Natural Sciences of the Karakalpak Branch of the Academy of Sciences of the Republic of Uzbekistan, Nukus, Uzbekistan

Radioelectronics and Communications Systemsjournal2009en

ABI

Abstract

Using method of Auger electronic spectroscopy, we experimentally research an influence of microwave treatment on efficient thickness modification in transition layer of Mo-GaAs contacts. It is shown that parameters of Schottky barriers (barriers height ϕ B and ideality factor n) are correlated with efficient thickness of transition layer after microwave treatment.

Topics

Semiconductor materials and interfaces Copper Interconnects and Reliability Semiconductor materials and devices

Identifiers

DOI: 10.3103/s0735272709100057

Citations and references

Cited by 03 references

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