Features of current carriers that cause thermo-photo conductivity in manganese silicide[H1]

Abstract

The relationship between temperature and electroconductivity of the higher manganese silicide Mn4Si7(MnSi1.75) has been investigated. Using the nonmonotonic relationship between electric conductivity and temperature, a model of electronic junctions involving tunneling, jumping, subzone-zone, and indirect zone-zone transitions is proposed.

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Identifiers

DOI

10.3103/s0003701x0903013x

Citations and references