The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals
М. М. МездрогинаIoffe Physicotechnical Institute, St. Petersburg, 194021, RussiaE. Yu. DanilevskiiIoffe Physicotechnical Institute, St. Petersburg, 194021, RussiaRoman KuzminIoffe Physicotechnical InstituteН. К. ПолетаевIoffe Physicotechnical Institute, St. Petersburg, 194021, RussiaИ. Н. ТрапезниковаIoffe Physicotechnical Institute, St. Petersburg, 194021, RussiaМ. В. ЧукичевMoscow State University, Moscow, 119899, RussiaГ. А. БордовскийRussian State Pedagogical University, St. Petersburg, 191186, RussiaА. В. МарченкоRussian State Pedagogical University, St. Petersburg, 191186, RussiaM. V. EremenkoSt. Petersburg State Polytechnical University, St. Petersburg, 195021, Russia
ABI
Abstract
On the basis of the results of complex investigations (photoluminescence, x-ray fluorescence, and infrared spectroscopy), the features of emission-spectra formation are shown under the change in the type (Fe, Cu, and Si) and concentration of background impurities appearing during both growth and treatment of bulk crystals by grinding and polishing. Special attention is given to the concentration and types of bonds with hydrogen-the basic impurity preventing the formation of crystals with the p-type conductivity.
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