Article

Base digital schemes on complementary bipolar transistors

N. B. AlimovaTashkent University of Information Technologies, Tashkent, UzbekistanЗ.Х. АРИПОВАTashkent University of Information Technologies, Tashkent, UzbekistanSh. T. ToshmatovTashkent University of Information Technologies, Tashkent, Uzbekistan

2010en

ABI

Abstract

A way to use the injection-voltaic mode of the bipolar transistor in order to create electronic switching cells (electronics keys), which are the basis of digital electronic elements, with power supply voltage of order of the contact potential difference is investigated.

Topics

Sensor Technology and Measurement Systems

Identifiers

DOI: 10.1109/icaict.2010.5612004

Citations and references

Cited by 1 1 references

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