White radiation upon breakdown of an nSi— pCdiamond heterojunction and upon limiting efficiency of a silicon solar element
Timur SalievPhysicotechnical Institute, Physics of the Sun Scientific Production Association, Uzbek Academy of Sciences, Tashkent, UzbekistanМ. С. СаидовPhysicotechnical Institute, Physics of the Sun Scientific Production Association, Uzbek Academy of Sciences, Tashkent, Uzbekistan
ABI
Abstract
White radiation was registered upon breakdown of nSi— pCdiamond heterojunction resulting from collision ionization and recombination of electron-hole pairs without thermalization of an excess energy of electrons. The probabilities of collision ionization and radiation transitions of photoelectrons in the region of a conduction band generated by photons with energy above 2E g and of enhancement of the limiting efficiency of a silicon solar element are discussed.
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