Article

On energy levels and heat generation of electron—hole pairs in Ge alloyed with CuInSe2 and Al2Te3

М. С. СаидовPhysicotechnical Institute, Physics of the Sun Scientific Production Association, Uzbek Academy of Sciences, Tashkent, Uzbekistan

Applied Solar Energyjournal2010en

ABI

Abstract

On the assumption of the possibility of obtaining continuous and concentrated solid substitutional solutions of multicomponent diamond-type compounds, orientation numbers and positions of energy levels of defects formed in Ge by molecules of diluted CuInSe2 and Al2Te3 are offered. Heat generation of electron-hole pairs in solid solutions of substitution of (Ge4)1-x(CuInSe2)x and (Ge6)1-x(Al2Te3)x with x < 0.005 is discussed.

Topics

Chalcogenide Semiconductor Thin Films Phase-change materials and chalcogenides Semiconductor materials and interfaces

Identifiers

DOI: 10.3103/s0003701x10030102

Citations and references

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