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The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon

M. KаrimovInstitute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of UzbekistanSh. MakhkamovInstitute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of UzbekistanN.A. TursunovInstitute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of UzbekistanSh. A. MakhmudovInstitute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of UzbekistanA. A. SulaimonovInstitute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of Uzbekistan
Russian Physics Journaljournal2011en
ABI

Abstract

No abstract available.

Topics

Advanced Materials and Semiconductor TechnologiesAdvanced Energy Technologies and Civil Engineering InnovationsSemiconductor materials and interfaces

Identifiers

DOI
10.1007/s11182-011-9656-6

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Cited by 01 references
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