Investigation into the charge-carrier generation processes in MIS structures with lead borosilicate glass-based dielectrics
П. Б. ПарчинскийNational Academy of Uzbekistan, Vuzgorodok, Tashkent, 100174, Republic of UzbekistanЛ. Г. ЛигайNational Academy of Uzbekistan, Vuzgorodok, Tashkent, 100174, Republic of UzbekistanAslan NasirovNational Academy of Uzbekistan, Vuzgorodok, Tashkent, 100174, Republic of UzbekistanМ. М. АлламбергеновKara Kalpak State University, ul. Akad. Ch. Abdirova 1, Nukus, 742000, Republic of UzbekistanК. А. ИсмайловKara Kalpak State University, ul. Akad. Ch. Abdirova 1, Nukus, 742000, Republic of Uzbekistan
ABI
Abstract
The generation properties of the silicon — lead-borosilicate glass interface are studied by the method of pulsed MIS capacitor. It was shown that surface generation current nomonotonicly depends on temperature. This nomonotonic dependence may be the result of tunnel and tunnel activated current from traps states in lead-borosilicate glasses localized close to the silicon-glass interface which contributes to the total surface generation current and becomes dominant as the temperature is lowered.
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