Article

Thermal properties of manganese-doped ZnO polycrystalline films

Kh. T. IgamberdievQuantum-Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-Dong, Chung-Gu, Seoul, 100-715, KoreaSh. U. YuldashevDepartment of Thermophysics, Uzbekistan Academy of Sciences, ul. Katartal 28, Tashkent, 700135, UzbekistanTae Won KangQuantum-Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-Dong, Chung-Gu, Seoul, 100-715, KoreaVasiliy PelenovichDepartment of Physics, School of Physics and Technology, Wuhan University, Wuhan, 430072, ChinaSh. M. RakhimovaDepartment of Thermophysics, Uzbekistan Academy of Sciences, ul. Katartal 28, Tashkent, 700135, UzbekistanT. Kh. AkhmedovDepartment of Thermophysics, Uzbekistan Academy of Sciences, ul. Katartal 28, Tashkent, 700135, Uzbekistan

Physics of the Solid Statejournal2012en

ABI

Abstract

The thermal conductivity and heat capacity of manganese-doped zinc oxide polycrystals have been studied in the temperature range 30–300 K. A substantial influence of the secondary phase or MnO clusters formed as a result of doping on the temperature dependences of thermophysical properties of polycrystalline zinc oxide films has been shown.

Topics

ZnO doping and properties Gas Sensing Nanomaterials and Sensors Transition Metal Oxide Nanomaterials

Identifiers

DOI: 10.1134/s1063783412100150

Citations and references

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