Formalism «Magneto Cross-Sections» of D– (A+ )-Centers at Resonance Scattering of Charged Carriers in Angenerated Semiconductors
Abstract
The new approach to study of kinetic effects in covalent semiconductors is developed. On example of the calculation kinetic coefficients at resonance scattering some particularities of the proposed approach are demonstrated. Influence of limited weak magnetic field on kinetic effects is studied. Unlike standard method, taking into account presence of the H-field in the nonequilibrium distribution function with the following reception sought formulas for kinetic coefficients, in proposed approach presence (the influence) of the weak H-field is fixed as local (virtual) incrementation of crosssection of the concrete scattering, in this given case it’s resonance. Formal change res eff 0 H allows relatively easy to analyze the influence of the H-field on kinetic effects. It is shown that at presence of the H-field electronic conductivity reached the maximum near 1 K in the range of fields of the order 100 Gauss. General result is revealed in process of the calculation at any mechanism of the scattering. The main requirement is that the low-temperature asymptotics T 0 l of concrete mechanism of the scattering should be constant