Article

Alloying of materials and energy barriers of photoelectric thermal cells

М. С. СаидовPhysical Technical Institute, Physics of the Sun Scientific Association, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

Applied Solar Energyjournal2014en

ABI

Abstract

The possibility for designing highly effective photoelectric thermal cells on the basis of heavily alloyed narrow-zone semiconductors with forbidden bandwidths of 0.3–0.4 eV is discussed.

Topics

Calibration and Measurement Techniques Transition Metal Oxide Nanomaterials Advanced Semiconductor Detectors and Materials

Identifiers

DOI: 10.3103/s0003701x14040148

Citations and references

Cited by 01 references

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