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Work: Formation and annealing of vacancy-P complexes in proton-irradiated germanium

  1. General Theory of Impurity Diffusion in Semiconductors via the Vacancy Mechanism

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  2. Defects in electron-irradiated Ge studied by positron lifetime spectroscopy

    A. Polity, F. Rudolf

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  3. Property of Radiation-Induced Defects in Germanium Single Crystals

    Noboru Fukuoka, Makoto Honda, Yoko Nishioka +2

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  4. Self-diffusion in germanium isotope multilayers at low temperatures

    Erwin Hüger, U. Tietze, D. Lott +4

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  5. Identification of As-vacancy complexes in Zn-diffused GaAs

    Mohamed Elsayed, R. Krause‐Rehberg, B. Korff +2

    Article20132 citations
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  6. Positron Annihilation

    W. Triftshäuser

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