X-ray fluorescence analysis of chalcogenide glass with electron beam fluorescence excitation
А. В. МарченкоHertsen State Pedagogical University of Russia, nab. Moiki 48, St. Petersburg, 191186, RussiaК. У. БобохужаевUlugbek National University of Uzbekistan, Vuzgorodok 4, Alamazarskii massiv, Tashkent, 100174, UzbekistanА. В. НиколаеваHertsen State Pedagogical University of Russia, nab. Moiki 48, St. Petersburg, 191186, RussiaФ. С. НасрединовIoffe Physico-Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, RussiaП. П. СерегинHertsen State Pedagogical University of Russia, nab. Moiki 48, St. Petersburg, 191186, Russia
ABI
Abstract
The method of X-ray fluorescence analysis with the fluorescence excitation by an electron beam with 30 keV energy was used to determine the germanium, arsenic, and selenium content in the Ge1–x Se x , As1–x Se x , and Ge1–x–y AsySe x glassy alloys. This technique allows determining the quantitative glass composition with an accuracy of ±0.0002 in the surface layer of a depth of ~0.1 µm from parameters x and y of the linear calibration dependences.
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