Experimental research on silicon carbide photoconductive semiconductor switch
Yanling SunSchool of Technical Physics Xidian University No.2 South TaiBai Road Xi'an Shaanxi 710071 People's Republic of ChinaMeng YangSchool of Technical Physics Xidian University No.2 South TaiBai Road Xi'an Shaanxi 710071 People's Republic of ChinaChaoyang SongSchool of Technical Physics Xidian University No.2 South TaiBai Road Xi'an Shaanxi 710071 People's Republic of ChinaHui GuoSchool of Technical Physics Xidian University No.2 South TaiBai Road Xi'an Shaanxi 710071 People's Republic of ChinaShuqing JiangInstitute of Nuclear Physics and Chemistry, Academy of Engineering Physics
ABI
Abstract
ABSTRACT Silicon carbide photoconductive semiconductor switches with the good performance of breakdown voltage above 10 kV and ∼16‐Ω minimum on‐resistance are fabricated and tested. A good electrical pulse output is obtained when the switch is triggered by optical pulses. The output performances with different bias voltages are discussed, and the results indicate that the nonlinear output will not occur with the bias voltage increasing. The effects of bias voltage and optical pulse energy on the on‐resistance are investigated. The performance of different switch samples is compared. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1946–1948, 2015
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