Skip to main content
← Back to work

Works cited by this work

3 works

Work: The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3N4

  1. Trap creation in silicon dioxide produced by hot electrons

    D. J. DiMaria, J. Stasiak

    Article19893 citations
    ABI
  2. Untitled

    Other1 citations
    ABI
  3. Untitled

    Other1 citations
    ABI