Article

Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films

G. GulyamovNamangan Engineering-Pedagogical Institute, Namangan, UzbekistanA. G. GulyamovPhysico-technical Institute, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanFeruza R. MuhitdinovaNamangan State University, Namangan, Uzbekistan

Journal of Modern Physicsjournal2016en

ABI

Abstract

Influence of recombination centers’ changes on the form of phase portraits has been studied. It has been shown that the shape of the phase portraits depends on the concentration of semiconductor materials’ recombination centers.

Topics

nanoparticles nucleation surface interactions Silicon Nanostructures and Photoluminescence Semiconductor materials and interfaces

Identifiers

DOI: 10.4236/jmp.2016.713151

Citations and references

Cited by 05 references

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