Vertical Al<sub>2</sub>Se<sub>3</sub>/MoSe<sub>2</sub> heterojunction on sapphire synthesized using ion beam
Hsu‐Sheng TsaiHsinchu 30013Jhe‐Wei LiouDepartment of PhysicsYi-Chung WangDepartment of Material Science and EngineeringChia-Wei ChenDepartment of Material Science and EngineeringYu‐Lun ChuehDepartment of Material Science and EngineeringChing-Hung HsiaoDepartment of Material Science and EngineeringHao OuyangDepartment of Material Science and EngineeringWei‐Yen WoonDepartment of PhysicsJenq‐Horng LiangDepartment of Engineering and System Science
ABI
Abstract
The vertical Al<sub>2</sub>Se<sub>3</sub>/MoSe<sub>2</sub> heterojunction on sapphire was first fabricated <italic>via</italic> an ion beam-assisted process.
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