Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur
Abstract
On the basis of comparative analysis of electrical properties of silicon doped with sulfur and nickel respectively at temperature range of 1000-1250°C in 50°C increments and after their subsequent thermal annealing at temperature range of 400-950°C together with control samples of silicon doped with sulfur and nickel, it was revealed that impurity centers of sulfur and nickel do not interact with each other in the matrix of silicon. The absence of such interaction is possibly due to the fact that the electronic configuration of the impurity centers of nickel in the crystal lattice of silicon turns out to be in the filled <i>3d<sup>1</sup>0</i> state, which gives it the character of an inert gas. In view of the absence of interaction of sulfur and nickel in silicon, it is concluded that electrically neutral chemically bound complexes in silicon are formed between sulfur substitution centers and centers of transition metal atoms.