Method of Increasing Photosensitivity of Silicon Power Planes for Solar Energy
Abstract
The solubilities of sulfur are determined by neutron activation analysis and silicon compensation by sulfur with different concentrations of the initial boron. It is shown that the sulfur solubility at a silicon doping temperature of 1250°C is ~1.8 × 1016 cm–3. Joint analysis of the results of studies of photoconductivity (PC) spectra, both in combined illumination with integral and infrared (IR) light and after the integral light is switched off, and the results of a study of the isothermal relaxation spectra of the capacity (DLTS) of Si❬S❭ crystals manufactured at different pressures of the diffusant vapor been established that single sulfur centers in silicon create two deep levels of ES – 0.12 and ES – 0.18 eV. All of the remaining energy levels of ES – 0.27 and ES – 0.53 eV are related to the quasi-molecules S2 and S4, respectively.