Optimization of the electron transport in quantum dot light-emitting diodes by codoping ZnO with gallium (Ga) and magnesium (Mg)
Hong Hee KimCenter for Opto-Electronic Materials and DevicesDavid O. KumiSchool of PhysicsKiwoong KimPhysics and Applied PhysicsDonghee ParkCenter for Opto-Electronic Materials and DevicesYeonjin YiPhysics and Applied PhysicsSo‐Hye ChoKoreaCheolmin ParkDepartment of Materials Science and EngineeringO.M. NtwaeaborwaSchool of PhysicsWon Kook ChoiCenter for Opto-Electronic Materials and Devices
ABI
Abstract
Optimized QD-LEDs are fabricated using Ga–Mg-codoped ZnO NPs as ETL, which reached the LE<sub>max</sub> and PE<sub>max</sub> at 15.4 cd A<sup>−1</sup> and 10.3 lm W<sup>−1</sup>.
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