Article

Characterization of CdTe and CdS Films for Photoresistors

T.M. RazykovPhysical-Technical Insitute of SPA Physics-Sun, Uzbekistan Academy of Sciences, 100084, Tashkent, UzbekistanA. BosioUniversity of Parma, 43121, Parma, ItalyN. RomeoUniversity of Parma, 43121, Parma, ItalyB. A. ErgashevPhysical-Technical Insitute of SPA Physics-Sun, Uzbekistan Academy of Sciences, 100084, Tashkent, UzbekistanAbdurashid MavlonovPhysical-Technical Insitute of SPA Physics-Sun, Uzbekistan Academy of Sciences, 100084, Tashkent, UzbekistanA. Yu. UsmonovPhysical-Technical Insitute of SPA Physics-Sun, Uzbekistan Academy of Sciences, 100084, Tashkent, UzbekistanShaxboz A. EsanovPhysical-Technical Insitute of SPA Physics-Sun, Uzbekistan Academy of Sciences, 100084, Tashkent, Uzbekistan

Applied Solar Energyjournal2019en

ABI

Abstract

Dependences of the evaporation temperature and the growth rate on minimal condensation temperature of polycrystalline CdS films in chemical molecular-beam deposition are discussed. The effect of the evaporation rate and the substrate temperature on the morphology of films has been studied.

Topics

Advanced Semiconductor Detectors and Materials Chalcogenide Semiconductor Thin Films

Identifiers

DOI: 10.3103/s0003701x19010110

Citations and references

Cited by 2 17 references

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