Power Amplifier With Injection-Voltaic Transistor With Quiescent Current Stabilization
Aripov Khayrulla KabilovichDepartment of Electronics and Radio Engineering, Tashkent University of Information Technologies named after Muhammad al Khwarizmi, Tashkent, UzbekistanToshmatov Shunqorjon ToshpulatovichDepartment of Electronics and Radio Engineering, Tashkent University of Information Technologies named after Muhammad al Khwarizmi, Tashkent, UzbekistanAripova Umida KhayrullayevnaDepartment of systems of TV, radiobroadcasting Tashkent University of Information Technologies named after Muhammad al Khwarizmi, Tashkent, Uzbekistan
2019 International Conference on Information Science and Communications Technologies (ICISCT)conference2019en
ABI
Abstract
Possibility of use of the bipolar transistor working in injection-voltaic a mode, as the operated generator of a stable current is investigated. It is created three-structural injection-voltaic the transistor, simultaneously strengthening and high-current resistance (a mode of the generator of a current). It is developed operated high-current generator on the bipolar transistor. The scheme of the power amplifier with no need of initial or subsequent adjustments of quiescent current, resistant to temperature variations, supply voltage variations and the scatter of parameters of transistors.
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