Crystal Structure and Band Gap of Nanoscale Phases of Si Formed at Various Depths of the Near-Surface Region of SiO2
Д. А. ТашмухамедоваTashkent State Technical University, 100095, Tashkent, UzbekistanM. B. YusupjanovaTashkent State Technical University, 100095, Tashkent, UzbekistanG. Kh. AllayarovaTashkent State Technical University, 100095, Tashkent, UzbekistanБ. Е. УмирзаковTashkent State Technical University, 100095, Tashkent, Uzbekistan
ABI
Abstract
Si nanophases and nanolayers were obtained by bombardment with Ar+ ions followed by annealing at various depths of silicon oxide. As ion energy E0 varies from 10 to 25 keV, the average depth of Si nanophase formation varies from 15 to 25 nm. It is shown that, as the sizes of Si nanophases vary from ~10 to 25 nm, band gap Eg decreases from 1.9 to 1.5 eV. For Si nanolayers, Eg is ~1.1–1.2 eV.
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