Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

Abstract

Abstract. Single-crystal films of a graded-gap solid solution Si1-xGex (0 <x <1) was grown on Si substrates from limited tin, gallium solution-melt. Accordingly, liquid phase epitaxy method was applied in the process. The formation of dislocations, grown under various technological conditions, at the substrate-film interface along the growth direction of the Si1-xGex solid solution was studied. Optimal technological growth modes for obtaining crystalline perfect epitaxial layers and structures are given.

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DOI

10.33619/2414-2948/58/01

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