Study of the metal-dielectric phase transition of VO<sub>2</sub>: N film
Kh O UrinovSamarkand branch of Tashkent University of information technologies named after Mukhammad al-Khwarizmi, 47A Sh.Mirzo Street, Samarkand, 140100, UzbekistanA K AmonovSamarkand branch of Tashkent University of information technologies named after Mukhammad al-Khwarizmi, 47A Sh.Mirzo Street, Samarkand, 140100, UzbekistanKh A JumanovSamarkand branch of Tashkent University of information technologies named after Mukhammad al-Khwarizmi, 47A Sh.Mirzo Street, Samarkand, 140100, UzbekistanJ O UrinovSamarkand branch of Tashkent University of information technologies named after Mukhammad al-Khwarizmi, 47A Sh.Mirzo Street, Samarkand, 140100, UzbekistanF Dj MakhmudovAcademic lyceum under the Samarkand branch of Tashkent University of Information technologies named after Mukhammad al-Khwarizmi, 3 Turkiston Street, Samarkand, 140161, Uzbekistan
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Abstract
Abstract In our work we studied the magnetic and electrical properties of thin VO 2 : N films, as well as the technology for producing films from the gas phase by the pyrolysis method. The features of the phase transition in VO 2 : N films are described, the anomalies found in the curve of the temperature dependence of electrical resistance, as well as the memory phenomenon and kinetics of the phase transition in VO 2 : N films are explained.
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