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Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

A. S. GazizulinaNational University of Uzbekistan, 100176, Tashkent, UzbekistanAslan NasirovNational University of Uzbekistan, 100176, Tashkent, UzbekistanA. A. NebesniyNational University of Uzbekistan, 100176, Tashkent, UzbekistanP. B. ParchinskiyNational University of Uzbekistan, 100176, Tashkent, UzbekistanDojin KimChungnam National University, 305-764, Taejon, Korea
Semiconductorsjournal2021en
ABI

Abstract

The temperature dependence of the anisotropy of the magnetotransport properties of GaMnAs epitaxial layers featuring ferromagnetic order is investigated. The anisotropy of negative magnetoresistance that is unrelated to the presence of uniaxial anisotropy and the orientation of the hard magnetization axis is observed. This anisotropy may result from the occurrence of spatially oriented structures in GaMnAs that emerge in the bulk of the epitaxial layer during growth.

Topics

ZnO doping and propertiesMagnetic and transport properties of perovskites and related materialsMultiferroics and related materials

Identifiers

DOI
10.1134/s1063782621020123

Citations and references

Cited by 319 references
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