Compensation effect of growth of the lifetime of charged carriers in semiconductors at a magnetic field
Abstract
The condition of regulation of increasing of carrier lifetime by recombination processes in semiconductors at low temperatures (1-10) K and classical "strong" magnetic fields (3·10 2 -3·10 4 ) Gs are analyzed. The values of carrier concentrations (10 10 -10 14 ) cm -3 correspond to conditions of manifestation as cascade as resonant capture. It is indicated on necessarily to take into account of scattering of electrons on acoustic phonons along with electron-electron collisions, by it cascade capture on cuolomb centers. As showed (on the basis of concrete estimates) namely scattering on acoustic phonons at cascade capture, stabilities of lifetime and controls of dynamics it increases in the presence of "strong" magnetic field. Keywords: effective coefficient of capture, cascade capture, recombination, classical "strong" magnetic field, "shallow" acoustic phonons, electron-electron collisions, lifetime.