Anisotropy of Carrier Transport Processes in GaMnAs Grown via Low Temperature Molecular Beam Epitaxy
A. S. GazizulinaNational University of Uzbekistan,Department of Physics,Tashkent,UzbekistanAslan NasirovNational University of Uzbekistan,Department of Physics,Tashkent,UzbekistanP.B. ParchinskiyNational University of Uzbekistan,Department of Physics,Tashkent,Uzbekistan
2022en
ABI
Abstract
Anisotropy of the transport properties of GaMnAs epitaxial layers with Mn concentration of 1.4 and 2.8 at. % has been investigated by means of measurements of magnetoresistance and temperature dependence of sheet resistance. The anisotropy of magnetoresistance, measured along [110] and $[1 \overline{1} 0]$ crystalline direction in high magnetic field region has been observed for both Mn concentration. The differences in temperature dependence of resistance, measured along different crystalline directions, for both above and below $T_{\mathrm{C}}$ were detected. It was shown that anisotropy of transport properties of GaMnAs could be related with carriers scattering by inhomogeneous distributed Mn ions.
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