Influence of the parameters to transition capacitance at NCDS-PSI heterostructure
I.B. SapaevNational Research University TIIAME, st. Kori Niyazov, house 39, 100000 Tashkent, UzbekistanБ. СапаевTashkent State Agrarian University, 2, Universitet st, 100140 Tashkent, UzbekistanDiyorjon ÀbdullaevTashkent State Pedagogical University, Bunyodkor avenue, 27, 100070 Tashkent, UzbekistanJo`shqin AbdullayevNational Research University TIIAME, st. Kori Niyazov, house 39, 100000 Tashkent, UzbekistanA. V. UmarovTashkent State Transport University, pass. 1st Temiryulchilar, 1, 100167 Tashkent, UzbekistanR. U. SiddikovKokand Branch of Tashkent State Technical University, Usmon Nosir street 4, Fergana region, Kokand, UzbekistanA. A. MamasolievKokand Branch of Tashkent State Technical University, Usmon Nosir street 4, Fergana region, Kokand, UzbekistanKh.S. DalievResearch Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Yangi Almazar street, house 20, 100057 Tashkent, Uzbekistan
ABI
Abstract
It is important to research the dependence of the capacitance and capacitance on the parameters on the photodiodes. In this article, we aim research experimental and theoretical on the nCdSpSi heterostructure. A heavily doped n+CdS layer with a thickness of about 50 Å was created by deposition of a thin layer of indium (In) for 25-30 s on the surface of a CdS film in vacuum with a residual pressure of 10-5Torr at a substrate temperature of 373 K, followed by annealing at 673 K in within 300s. Then, on the surface of this heavily doped n+CdS layer, a current-collecting “P”-shaped ohmic contact with an area of 3 mm2 was obtained also by the vacuum evaporation of In.