Scaling Models of Electrical Properties of Photo- and Beta-Converters with Nano-Heterojunctions
M. V. DolgopolovSamara National Research University named after Academician S.P. KorolevMaksim ElisovSamara National Research University named after Academician S.P. KorolevSali A. RajapovInstitute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of UzbekistanA. S. ChipuraSamara National Research University named after Academician S.P. Korolev
ABI
Abstract
The new methodology is developed and the computer simulation of scaling the electrical properties of nanochips-generators of a semiconductor energy converter based on nanoscale contact heterojunctions to ensure maximum power is considered. The variant of optimization of the scaling solution is represented by the connection of nanoheterojunctions with an increase in the current density of nonequilibrium carriers and the open circuit voltage. A generalized equivalent scheme for variations of internal properties and identification of experimental data is presented. The influence of the type of scaling and model parameters is analyzed.
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