Effect of the Sb/Se Ratio on the Structural and Electrical Properties of SbxSey Films
М. С. ТивановFaculty of Physics, Belarusian State University, 220030, Minsk, BelarusT. M. RazykovPhysical-Technical Institute, Uzbekistan Academy of Sciences, 100084, Tashkent, UzbekistanК. M. KuchkarovPhysical-Technical Institute, Uzbekistan Academy of Sciences, 100084, Tashkent, UzbekistanD. S. BaykoFaculty of Physics, Belarusian State University, 220030, Minsk, BelarusI.A. KaputskayaFaculty of Physics, Belarusian State University, 220030, Minsk, BelarusR. T. YuldoshovPhysical-Technical Institute, Uzbekistan Academy of Sciences, 100084, Tashkent, UzbekistanM. PirimmetovPhysical-Technical Institute, Uzbekistan Academy of Sciences, 100084, Tashkent, Uzbekistan
ABI
Abstract
SbxSey thin films were obtained from precursor of pure antimony and selenium granules evaporated in the temperature ranges from 980 to 1025°C for Sb and 415 to 470°C for Se by chemical molecular beam deposition method on glass substrates. It was found that the films consist mainly of the SbxSey phase and have a different Sb/Se ratio in the range from stoichiometry to 0.89. Controlling the fraction of components allows to change the orientation of crystallites, which, in turn, leads to changes in electrical conductivity.
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