Article

Features of bismuth telluride based ternary alloys for thermoelectric applications

Maksim DiuldinPeter the Great Saint-Petersburg Polytechnic University, 195251, Saint Petersburg, RussiaAnarkhan KasimaxunovaFerghana Polytechnic Institute, 150107, Ferghana, Republic of UzbekistanAlexey CheremisinPeter the Great Saint-Petersburg Polytechnic University, 195251, Saint Petersburg, RussiaMukhayyo LatipovaFerghana Polytechnic Institute, 150107, Ferghana, Republic of UzbekistanVitaly TseikoFerghana Polytechnic Institute, 150107, Ferghana, Republic of UzbekistanSergey RudPeter the Great Saint-Petersburg Polytechnic University, 195251, Saint Petersburg, RussiaLeisan TseikoKaliningrad Research Institute of Agriculture, Branch of the V. R. Williams Federal Research Institute for Fodder Production and Agroecology, 238630, Russia, Kaliningrad region, RussiaNikolai VatinPeter the Great Saint-Petersburg Polytechnic University, 195251, Saint Petersburg, RussiaViktor KrasnoshchekovPeter the Great Saint-Petersburg Polytechnic University, 195251, Saint Petersburg, RussiaVasily RudFerghana Polytechnic Institute, 150107, Ferghana, Republic of UzbekistanNatalia SemenovaPeter the Great Saint-Petersburg Polytechnic University, 195251, Saint Petersburg, Russia

E3S Web of Conferencesjournal2023en

ABI

Abstract

The presented article provides a comparative analysis of the methods of manufacturing technology for semiconductor branches of p- and n-type conductivity. For comparative analysis, a method is considered for obtaining ternary alloys based on the Bi2Te3 base material by pressing and zone melting. The sequence of the manufacturing process, the principles of operation and design of devices used to obtain alloyed substances, as well as methods for studying and measuring the electrophysical parameters of the thermoelement legs included in the assembled thermopile are described. The principles of automatic temperature control of an electric furnace by a two-position method are indicated. The advantages of the zone melting method are determined and the best values of the figure of merit of a thermoelectric material are shown. It is proved that the original values of the parameters of the branches are preserved after they are assembled into a battery.

Topics

Advanced Thermoelectric Materials and Devices Advanced Semiconductor Detectors and Materials Chalcogenide Semiconductor Thin Films

Identifiers

DOI: 10.1051/e3sconf/202345801030

Citations and references

Cited by 037 references

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