Contacts for SiC nano-microwatt energy converters
Abstract
The aim of this investigation is to consider the internal processes in the contact zone of the semiconductor with radionuclide microalloying: the diffusion of atoms during endotaxy, the diffusion of atoms after the decay of radionuclides, the formation of electrons and the material features arising from such diffusion. The DFT approach in this paper is aimed at obtaining evidence of the vacancy mechanism of diffusion. Radionuclide atoms diffuse into the growing layer of silicon carbide on silicon at the level of isoelement microalloying, forming, depending on the phase, effects that energetically manifest themselves as the effect of the «inner sun», which is the source of the spectrum of primary electrons and secondary electron-hole pairs at ionization losses. This is due to the interaction with the electrons of the shells of neighboring atoms, generating secondary electrons and holes in the region of spatial charge, carried by built-in electric fields.