Obtaining new types of compounds between silicon and cadmium sulfide

Abstract

The n + CdS-nCdS-nSi + structures were obtained, and their volt-ampere characteristics at different temperatures were studied. The dependence of the volt-ampere characteristic shows that the sublinear and quadratic section of these structures has a section of current growth with voltage. It is determined that the n + CdS-nCdS-nSi + structures in the current flow direction at low illumination levels work as an injection photodiode. And these structures under laser illumination with λ=0.625 μm and power P=1.2 µW/cm 2 have spectral sensitivity 2042 A/W, bias voltage 10 V. At irradiation by white light with energy W=3.6-10µW·s it has integral sensitivity ≈21 A/I'm (2310 A/W) at bias voltage U=10V.

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Identifiers

DOI

10.1051/e3sconf/202340103076

Citations and references