Structure of Aluminum Films for the Creation of Tunnel Junctions
М. В. СтрелковKotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009, Moscow, RussiaA. M. ChekushkinKotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009, Moscow, RussiaA. A. LomovValiev Physicotechnological Institute, Russian Academy of Sciences, 117218, Moscow, RussiaS. V. KraevskiiOrekhovich Research Institute of Biomedical Chemistry, 119121, Moscow, RussiaM. Yu. FominskiiKotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009, Moscow, RussiaM. A. TarasovKotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009, Moscow, Russia
ABI
Abstract
A series of studies of the structure of aluminum films deposited on single-crystal silicon substrates in different temperature regimes has been carried out. The roughness and grain size of 20-nm thick films of nuclei deposited at elevated temperatures and also dusted over the nucleus layer at room temperature to a thickness of 150 nm was studied using an atomic force microscope. The film profile was measured in an electron microscope. It is found that films on a hot sublayer turn out to be smoother, more rigid (less friable), and make it possible to expect the creation of superconductor–insulator–superconductor and superconductor–insulator–normal metal transitions with a higher current density and lower capacitance, respectively.
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