Photoelectric characteristics of Si-photocetitors
Abdumalik GaibovTashkent State Technical University named after Islam Karimov, 100095, Uzbekistan, Tashkent, University St. 2AAbdugani EshkulovTashkent State Technical University named after Islam Karimov, 100095, Uzbekistan, Tashkent, University St. 2AUtkur JuraevTashkent State Technical University named after Islam Karimov, 100095, Uzbekistan, Tashkent, University St. 2AKutbidin VakhobovTashkent State Technical University named after Islam Karimov, 100095, Uzbekistan, Tashkent, University St. 2A
ABI
Abstract
The work examines the influence of ultrasonic fields on the photoelectric and spectral characteristics of diffusion Si-n-p receivers of electromagnetic radiation. It has been established that ultrasonic irradiation increases the lifetime and diffusion length of carriers and, as a consequence, increases the efficiency of carrier collection at the electrical contacts of Si-n-p receivers. As a result of these processes, an increase in the short-circuit current is observed, which causes an increase in the open-circuit voltage of the Si-n-p structure operating in the photoconversion mode.
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