Efficient effect of deep levels on the photoelectric properties of a heterostructure based on p CdTe – n CdS and p CdTe – n CdSe
Salim OtajonovFerghana State University, Ferghana, UzbekistanRavshanbek ErgashevFerghana State University, Ferghana, UzbekistanSharof ShuxratovFerghana State University, Ferghana, UzbekistanKadir BotirovFerghana State University, Ferghana, UzbekistanYakub UsmonovFerghana State University, Ferghana, UzbekistanMansur BaxromovFerghana State University, Ferghana, Uzbekistan
ABI
Abstract
Photoelectric and current-voltage characteristics of solar elements based on heterojunctions of p-CdTe-n-CdS and p-CdTe-n-CdSe pellicles with deep impurity level are considered in the article. It is noted that the photosensitivity of heterostructures is significantly improved when Ag and Cu alloys are added to CdTe pellicles and approaches the infrared region of the spectrum. Clearly, the deep impurity level in CdTe has an activation energy equal to Ec=1,15 eV.