Effect of temperature and magnetic field on the density of surface states in semiconductor heterostructures
Abstract
• The dependence of the density of surface states on temperature and magnetic field for semiconductor heterostructural materials was theoretically explained. • A new analytical expression is proposed for calculating the influence of a magnetic field on the density of surface states at the semiconductor-insulator interface. • A mathematical model has been developed that determines the influence of a strong magnetic field on the temperature dependence of the density of surface states in semiconductor heterostructures. • Based on the proposed model, the division of continuous energy spectra measured at room temperature and under the influence of a strong magnetic field into discrete levels at low temperatures is explained. • A physical mechanism has been developed for the shift of discrete energy levels into the band gap at different magnetic field values. In this article, the physical properties of the surface of the CdS/Si(p) material under the influence of a magnetic field were studied . The dependence of the density of surface states of the p-type Si(p) semiconductor on the magnetic field and temperature has been studied. For the first time, a mathematical model has been developed to determine the temperature dependence of the density of surface states of a semiconductor under the influence of a strong magnetic field. Mathematical modeling of processes was carried out using experimental values of the continuous energy spectrum of the density of surface states, obtained at various low temperatures and strong magnetic fields, in the band gap of silicon. The possibility of calculating discrete energy levels is demonstrated.