Article

Determining discrete energetic states in a ligated silicon structure using a mathematical model

Jahongir MamadalievNamangan Engineering Technological Institute, Namangan, UzbekistanMuslim TurgunovNamangan Engineering Technological Institute, Namangan, UzbekistanNurmirza ToshmamatovNamangan Engineering Technological Institute, Namangan, UzbekistanDilmurod AskarovNamangan Engineering Technological Institute, Namangan, UzbekistanNurmirza AbdukhalilovNamangan Engineering Technological Institute, Namangan, Uzbekistan

AIP conference proceedingsjournal2024en

ABI

Abstract

The Al-SiO2-n-Si<Ni> structure without addition is experimental and T=300K. the density of surface states obtained using the model was determined. Using the mathematical model, discrete states on the surface at T=5 K were obtained. After that, the effect of Ni addition on the density of surface states was considered. The density of surface states obtained using the model, the presence of nickel addition changes the spectrum and it has Ec-0.17 eV, Ec-0.34 eV, Ec-0.39 eV. shows clearly visible peaks near the energies. According to model calculations, Ec-0.17 eV, Ec-0.34 eV, Ec-0.39 eV at T=5 K. A discrete cluster of concentrated energies appears.

Topics

Semiconductor materials and interfaces Semiconductor materials and devices Ion-surface interactions and analysis

Identifiers

DOI: 10.1063/5.0188021

Citations and references

Cited by 02 references

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